学　术

　　受电子科技大学电子科学与工程学院段兆云教授邀请，IEEE Fellow、APS Fellow美国威斯康星大学麦迪逊分校（University of Wisconsin-Madison）的John H. Booske教授来校交流。具体安排如下：

　　题　目：An accurate method for, and results of, measuring material conductivities in the terahertz frequency regime

　　主讲人：IEEE Fellow、APS Fellow　John H. Booske教授

　　时　间：2018年8月14日（周二）10:30

　　地　点：沙河校区逸夫楼521

　　主持人：段兆云 教授

　　主讲人介绍：Prof. John H. Booske

　　John H. Booske received the Ph.D. degree in nuclear engineering from the University of Michigan, Ann Arbor, MI, USA, in 1985. His current research interests include experimental and theoretical study of coherent electromagnetic radiation, its sources and its applications, spanning the RF, microwave, millimeter-wave, THz regimes, vacuum electronics, microfabrication of millimeter-wave and THz regime sources and components, high power microwaves, advanced cathodes, physics of the interaction of THz radiation and materials, microwave-generated plasma discharges, electromagnetic metamaterials, and biological applications of electric and electromagnetic fields. Prof. Booske is a fellow of the American Physical Society 2011. He received the University of Wisconsin Vilas Associate Award for research and the U.S. National Science Foundation Presidential Young Investigator Award. He has received many teaching awards, including the UW Chancellor’s Distinguished Teaching Award, the UW Teaching and Learning Innovation Award and the IEEE EAB Major Educational Innovation Award. He was a Co-Editor of Microwave and Radio Frequency Applications (American Ceramic Society, 2003) and Microwave and Millimeter-Wave Power Electronics (IEEE/Wiley, 2005). He has been a Guest Editor of the IEEE Transactions on Plasma Science.

　　内容简介：

　　Terahertz (THz) regime radiation offers significant potential for advances in communications, molecular detection and imaging. Successful engineering design of components and systems would benefit from accurate predictive models of material electronic properties such as the surface conductivities of metals and bulk conductivities of semiconductors. This becomes more challenging in the THz-regime when skin depths become less than typical surface roughness in metals and when the quasi-static field assumption of the basic Drude model.

　　主办单位：电子科技大学发展规划与学科建设处

　　承办单位：电子科技大学电子科学与工程学院

　　　　　　　　　　　　　　　　　　　　　电子科学与工程学院

　　　　　　　　　　　　　　　　　　　　　　2018年8月8日